Teledyne FLIR, part of Teledyne Technologies Incorporated, today announced the new ISC1504, ISC1901, and ISC1902 10-micron pitch readout integrated circuit (ROIC) devices. These devices join the lineup of near-infrared (NIR), mid-wavelength infrared (MWIR), and long-wavelength infrared (LWIR) devices in off-the-shelf ROIC solutions designed for applications ranging from academic research to most demanding military infrared systems.
At 1920 x 1080 resolution, the ISC1504 is the largest format ROIC offered by Teledyne FLIR optimized for InGaAs/VisGaAs detectors and uses a capacitive trans-impedance amplifier (CTIA) input circuit for P-on-N detectors. The ISC1504 supports anti-blooming, input skimming, multiple integration modes, and selectable output modes. A simple user interface with analog outputs allows for easy integration into high-resolution systems.
The ISC1901 (2048 × 1536 resolution) and the ISC1902 (2048 × 2048 resolution) are designed for P-on-N detectors with a direct injection input circuit. Both support single sample or sub-frame averaging for effective well fill of 3M to 19M electrons, respectively. The setting selections allow the user to control various modes such as 2 × 2 binning, 8 or 16 output channels, and additional reverse bias for Quantum Well Infrared Photodetector (QWIP) detectors. The familiar user interface from Teledyne FLIR makes system integration straightforward.
All ROIC devices are probe tested and delivered in wafer form with test data, a user’s guide describing all electrical interfaces, and a mechanical interface database providing the layout information for bump and detector interfaces. With low noise, variable charge storage capacitance, selectable integration times, adjustable gain and power settings, and a simple user interface, Teledyne FLIR mixed-signal ROICs offer a proven, cost-effective design without sacrificing performance or flexibility. Additionally, Teledyne FLIR offers full custom ROIC design services covering trade study, specification, design, testing, and fabrication of wafers.
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